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We are interested in the very initial stage of
film formation, the nucleation stage, which we can observe directly
in the film formation environment using optical techniques. The objective
of this research is to understand and then be able to modify film nucleation,
in order to optimize the electronics properties. |
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Recently we have commenced studies of high temperature
superconductor films and high dielectric constant dielectric films
which include in situ real-time analysis during ion beam sputter deposition
using ion scattering spectroscopy combined with ellipsometry. Also,
we continue to study silicon based thin film materials that photo-
and electro-luminescence for electro-optics applications and metal
silicide films for gate contacts.
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We have commenced a synthesis and characterization study of organic
films that display semiconducting properties. We follow the film
formation process in situ and in real time using spectroscopic
ellipsometry. We intend to construct transistors and to electronically
characterize the devices and intend to investigate the chemical
underpinnings for the promising electronic properties.
- Suvorova, NA; Lopez, CM; Irene, EA; Suvorova,
AA; Saunders, M. 2004.
Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si
substrates. JOURNAL OF APPLIED PHYSICS 95 (5): 2672-2675.
- Losurdo, M; Bruno, G; Irene, EA. 2003. Anisotropy
of optical properties of conjugated polymer thin films by spectroscopic
ellipsometry. JOURNAL OF APPLIED PHYSICS 94 (8): 4923-4929.
- Jones, CA; Yang, DX;
Irene, EA; Gross, SM; Wagner, M; DeYoung, J; DeSimone, JM.
2003. HF etchant solutions in supercritical carbon dioxide
for "Dry" etch processing
of microelectronic devices. CHEMISTRY OF MATERIALS 15 (15):
2867-2869.
- Goncalves, D; Irene, EA. 2003. The protective
nature of dodecanethiol self-assembled monolayers deposited
on Au for the electropolymerization of 3-methylthiophene. ELECTROANALYSIS
15 (7): 652-658.
- Mueller, AH; Suvorova, NA; Irene, EA; Auciello,
O; Schultz, JA. 2003.
Model for interface formation and the resulting electrical properties for
barium-strontium-titanate films on silicon. JOURNAL OF APPLIED PHYSICS 93
(7): 3866-3872.
- Goncalves, D; Irene, EA. 2002. Fundamentals
and applications of spectroscopic ellipsometry (vol 25, pg
794, 2002). QUIMICA NOVA 25 (6A): 1050-1050.
- "Models for the Oxidation of Silicon." E.A.
Irene, CRC Critical Reviews in Solid State and Materials Science,
Ed. J.E. Greene, Vol 14(2), pp 175-223 (1988).
- "Applications of Spectroscopic Ellipsometry
to Microelectronics." E.A. Irene, presented at First International
Conference on Spectroscopic Ellipsometry, Paris, France, Jan.
11-14, 1993 and Thin Solid Films, 233, 96 (1993).
- "In Situ Ellipsometry
in Microelectronics." E.A.
Irene and J.A. Woollam, Materials Res. Soc. Bull., Vol XX,
24 (1995).
- "In Situ Real-Time
Characterization of Thin Films.", Eds, O. Auciello and A. B. Krauss, Wiley
Interscience, (2001), Chapter 3 "In Situ Real-Time Characterization
of Surfaces and Film Growth Processes Via Ellipsometry." E.A.
Irene
- "In Situ Real-Time
Characterization of Oxide Film Growth and Other Processes Via
Spectroscopic Ellipsometry", E.A. Irene, Chapter for Volume
28 of the Annual Review of Materials Science, accepted for
2000.
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